Author:
Benick Jan,Schultz-Wittmann Oliver,Schön Jonas,Glunz Stefan W.
Subject
Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon
2. Minority carrier lifetime degradation in boron-doped Czochralski silicon
3. J. Libal, R. Petres et al., Proc. 20th EU PVSEC, Barcelona, Spain (2005), p. 793.
4. J. Zhao, J. Schmidt et al., Proc. 3rd WCPEC, Osaka, Japan (2003), p. 923.
5. Studies of diffused boron emitters: saturation current, bandgap narrowing, and surface recombination velocity
Cited by
13 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献