1. Zero-temperature-coefficient biasing point of a fully-depleted SOI MOSFET;Tan;Microwave Opt Technol Lett
2. Partially depleted SOI versus deep N-well protected bulk-Si MOSFETs: A high-temperature RF study for low-voltage low-power applications;Emam;IEEE Trans Microwave Theory Techn
3. Temperature dependence of the power gain and scattering parameters S11 and S22 of an RF nMOSFET with advanced RF-CMOS technology;Lin;Microwave Opt Technol Lett
4. A full X-band power amplifier with an integrated guanella-type transformer and a predistortion linearizer in 0.18-μM CMOS;Chung;Microwave Opt Technol Lett
5. A single-chip RF power amplifier with integrated impedance matching Wilkinson power dividers for 5.2 GHz WLAN applications;Kaymaksut;Microwave Opt Technol Lett