Radiation Effects and Their Impact on SRAM Design

Author:

Alekhya Y.,Nanda Umakanta,Pandey Chandan Kumar

Publisher

Wiley

Reference52 articles.

1. Analysis of SRAM metrics for data dependent BTI degradation and process variability

2. Leakage reduction in 18 nm FINFET based 7T SRAM cell using self controllable voltage level technique;Kumar T. S.;Wireless Personal Communications,2020

3. G.Prasad B. C.MandiandM.Ali Design and analysis of 10T‐boosted radiation hardened SRAM cell for aerospace applications in2019 IEEE International Symposium on Smart Electronic Systems (iSES)(Formerly iNiS) IEEE2019 pp.304–307.

4. Design of low power with expanded noise margin subthreshold 12T SRAM cell for ultra low power devices;Kumar H.;Journal of Circuits, Systems and Computers,2020

5. A 65‐nm reliable 6t cmos SRAM cell with minimum size transistors;Torrens G.;IEEE Transactions on Emerging Topics in Computing,2017

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