Role of Electric Field, Defects and Radiation Damage in Determining Reliability in AlGaN/GaN High Electron Mobility Transistors
Author:
Publisher
John Wiley & Sons, Inc.
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/9781119093466.ch70/fullpdf
Reference19 articles.
1. Reliability Mechanisms in GaN-Based HEMTs;Meneghesso;IEEE Transactions on Device and Materials Reliability,2008
2. D. Cheney “Reliability Studies of AlGaN/GaN High Electron Mobility Transistors,” Semicond. Sci. Technol. 28, 074019 (2013) 074019-074123
3. Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs;Piazza;Microelectron Rel,2009
4. TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs;Chowdhury;IEEE Electron Dev Lett,2008
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