High‐Bandwidth InGaAs Photodetectors Heterogeneously Integrated on Silicon Waveguides Using Optofluidic Assembly-Reference-Cited by-同舟云学术

High‐Bandwidth InGaAs Photodetectors Heterogeneously Integrated on Silicon Waveguides Using Optofluidic Assembly

Published:2021-12-22 Issue: Volume: Page:2100306
ISSN:1863-8880
Container-title:Laser & Photonics Reviews
language:en
Short-container-title:Laser & Photonics Reviews

Author:

Jung Youngho¹²^ORCID,Bae Sunghyun¹,Kwon Kyungmok¹³,Mitchell Colin J.⁴,Khokhar Ali Z.⁴,Reed Graham T.⁴,Wilkinson James S.⁴,Chung Yun C.¹,Yu Kyoungsik¹^ORCID

Affiliation:

1. School of Electrical Engineering Korea Advanced Institute of Science and Technology Daejeon 34141 Korea

2. Max Planck Institute of Microstructure Physics Weinberg 2 06120 Halle Germany

3. Department of Electrical Engineering and Computer Sciences University of California Berkeley CA 94720 USA

4. Optoelectronics Research Centre University of Southampton Southampton SO17 1BJ UK

Publisher

Wiley

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/lpor.202100306

Reference32 articles.

1. Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

2. Metal-semiconductor-metal ion-implanted Si waveguide photodetectors for C-band operation

3. On-Chip Optical Power Monitor Using Periodically Interleaved P-N Junctions Integrated on a Silicon Waveguide

4. Photon-assisted tunneling for sub-bandgap light detection in silicon PN-doped waveguides

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