Affiliation:
1. College of Materials and Chemistry China Jiliang University Hangzhou 310018 P. R. China
2. State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics Chinese Academy of Science Dalian 116023 P. R. China
3. Institute of Frontier and Interdisciplinary Science Shandong University Qingdao 266237 P. R. China
4. Nano‐Science Center & Department of Chemistry University of Copenhagen Universitetsparken 5 Copenhagen 2100 Denmark
Abstract
AbstractCsPbI3 quantum dots (QDs) hold tremendous promise for quantum emitters, but they undergo a considerable energy loss when excited above their optical bandgap, which impedes the utilization of high‐energy photons. Different surface modification strategies have been proposed to improve the phase stability of CsPbI3 QDs, however, little progress has been made to realize high photoluminescence quantum yield (PLQY) with high‐energy photon excitation. Here, a non‐resonant barrier excitation (NRBE) mechanism in conjugated aromatic tetraphenylporphyrin (H2TPP)‐modified CsPbI3 QDs is presented, which enables a high PLQY in the high‐energy excitation regime as well as enhanced phase stability. Particularly, the proposed H2TPP ligand possesses adequate energy depth needed to realize NRBE in CsPbI3 QDs, which allows efficient charge injection from organic ligands to the inorganic core. As a result, the H2TPP‐modified CsPbI3 QDs exhibit enhanced light absorption, large Stokes shift, and near‐unity red emission when excited above the optical bandgap. The findings provide new insights into the ligand design strategies for improving optoelectronic properties.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Zhejiang Province
National Key Research and Development Program of China
Novo Nordisk Fonden
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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