Affiliation:
1. State Key Laboratory of Advanced Optical Communication Systems and Networks Department of Electronic Engineering Shanghai Jiao Tong University Shanghai 200240 China
2. Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China
Abstract
AbstractSilicon photonics is becoming a competitive technology to settle the issues of power and speed in data centers and computing systems. However, the absence of an on‐chip light source restricts the wide and deep application of silicon photonics. Essentially, efficient edge coupling from a Si‐based III‐V laser to silicon photonic components remains the major obstacle for on‐chip integration. Here, two compact edge couplers with ultra‐low coupling loss and eased fabrication for the light transmission from a Si‐based III‐V laser to Si3N4 waveguide are realized. An ultra‐low laser‐to‐chip coupling loss of only 1.175 dB for the butt coupling of a Si‐based InAs QD laser is experimentally demonstrated with high alignment tolerance. The strategies presented here provide a competitive solution for realizing ultra‐efficient integration of Si‐based light sources and silicon photonic components.
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials