Integrated Multi‐Color Raman Microlasers with Ultra‐Low Pump Levels in Single High‐Q Lithium Niobate Microdisks

Author:

Zhao Guanghui12,Lin Jintian13ORCID,Fu Botao12,Gao Renhong1,Li Chuntao45,Yao Ni6,Guan Jianglin45,Li Minghui13,Wang Min4,Qiao Lingling1,Cheng Ya12457

Affiliation:

1. State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra‐Intense Laser Science Shanghai Institute of Optics and Fine Mechanics (SIOM) Chinese Academy of Sciences (CAS) Shanghai 201800 China

2. School of Physical Science and Technology ShanghaiTech University Shanghai 200031 China

3. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

4. The Extreme Optoelectromechanics Laboratory (XXL) School of Physics and Electronic Science East China Normal University Shanghai 200241 China

5. State Key Laboratory of Precision Spectroscopy East China Normal University Shanghai 200062 China

6. Research Center for Humanoid Sensing Zhejiang Lab Hangzhou 311100 China

7. Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan 030006 China

Abstract

AbstractIntegrated Raman microlasers, particularly discrete multi‐color lasers which are crucial for extending the emission wavelength range of chip‐scale laser sources to much shorter wavelengths, are highly in demand for various spectroscopy, microscopy analysis, and biological detection applications. However, integrated multi‐color Raman microlasers have yet to be demonstrated because of the requirement of high‐Q microresonators possessing large χ(2) nonlinearity, strong Raman phonon branches, and the challenge in the cavity‐enhanced multi‐photon hyper‐Raman scattering parametric process. In this work, integrated multi‐color Raman lasers have been demonstrated for the first time at weak pump levels, via the excitation of high‐Q (> 6 × 106) phase‐matched modes in single thin‐film lithium niobate (TFLN) microresonators by dispersion engineering. Raman lasing is observed at 1712 nm for a 1547‐nm pump threshold power of only 620 µW, representing the state of the art in the TFLN platform. Furthermore, multi‐color Raman lasers are realized at discrete wavelengths of 1712, 813, 533, and 406 nm with pump levels as low as 1.60 mW, which is more than two orders of magnitude lower than the current records (i.e., 200 mW) in bulk resonators, allowed by the fulfillment of the requisite conditions consisting of broadband natural phase match, multiple‐resonance, and high‐Q factors.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Wiley

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