Affiliation:
1. State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra‐Intense Laser Science Shanghai Institute of Optics and Fine Mechanics (SIOM) Chinese Academy of Sciences (CAS) Shanghai 201800 China
2. School of Physical Science and Technology ShanghaiTech University Shanghai 200031 China
3. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China
4. The Extreme Optoelectromechanics Laboratory (XXL) School of Physics and Electronic Science East China Normal University Shanghai 200241 China
5. State Key Laboratory of Precision Spectroscopy East China Normal University Shanghai 200062 China
6. Research Center for Humanoid Sensing Zhejiang Lab Hangzhou 311100 China
7. Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan 030006 China
Abstract
AbstractIntegrated Raman microlasers, particularly discrete multi‐color lasers which are crucial for extending the emission wavelength range of chip‐scale laser sources to much shorter wavelengths, are highly in demand for various spectroscopy, microscopy analysis, and biological detection applications. However, integrated multi‐color Raman microlasers have yet to be demonstrated because of the requirement of high‐Q microresonators possessing large χ(2) nonlinearity, strong Raman phonon branches, and the challenge in the cavity‐enhanced multi‐photon hyper‐Raman scattering parametric process. In this work, integrated multi‐color Raman lasers have been demonstrated for the first time at weak pump levels, via the excitation of high‐Q (> 6 × 106) phase‐matched modes in single thin‐film lithium niobate (TFLN) microresonators by dispersion engineering. Raman lasing is observed at 1712 nm for a 1547‐nm pump threshold power of only 620 µW, representing the state of the art in the TFLN platform. Furthermore, multi‐color Raman lasers are realized at discrete wavelengths of 1712, 813, 533, and 406 nm with pump levels as low as 1.60 mW, which is more than two orders of magnitude lower than the current records (i.e., 200 mW) in bulk resonators, allowed by the fulfillment of the requisite conditions consisting of broadband natural phase match, multiple‐resonance, and high‐Q factors.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Science and Technology Commission of Shanghai Municipality
Youth Innovation Promotion Association of the Chinese Academy of Sciences
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献