Affiliation:
1. Ningbo Institute of Materials Technology & Engineering Chinese Academy of Sciences Ningbo 315201 P. R. China
2. University of Chinese Academy of Sciences Beijing 100049 P. R. China
3. State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 P. R. China
Abstract
AbstractFar‐red (FR) and near‐infrared (NIR) spectroscopy technologies have attracted extensive attention. How to obtain luminescent materials suitable to FR‐NIR phosphor‐converted light‐emitting diodes (pc‐LEDs) is a crucial challenge. Herein, a Si3N4‐substitution strategy is employed to regulate the luminescence of Gd3Ga5O12:Cr3+ (GGG:Cr3+) phosphors. The bandwidth of GGG:Cr3+ is 95 nm, and then it is broadened to 116 nm due to the Si3N4‐substitution. Furthermore, at 423 K the thermal stability is enhanced to 98.7% of that at room temperature, which is higher than the reported 92.7%@423 K for the Si3N4‐free sample. The intensity of the optimal specimen is elevated 2.9 times compared with the Si3N4‐free sample sintered at the same condition. The FR pc‐LED is manufactured by using the optimized sample, and its FR output power is 47.1 mW with a conversion efficiency of 15.9% driven by 100 mA. This work paves a new way to design high‐performance NIR phosphors.
Funder
Natural Science Foundation of Ningbo Municipality
National Natural Science Foundation of China