Affiliation:
1. College of Chemistry and Materials Engineering Wenzhou University Wenzhou 325035 China
2. State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China
3. School of Optoelectronic Engineering & CQUPT‐BUL Innovation Institute Chongqing University of Posts and Telecommunications Chongqing 400065 China
Abstract
AbstractSilicon (Si) photodetectors (PDs) have attracted more attention due to their wide applications, but are limited by their extremely weak ultraviolet (UV) photo‐response. Herein, Dy3+‐CsPbCl2Br1 nanocrystals glass (Dy3+‐CPCB NCsG) is synthesized in borosilicate glass by traditional melt‐quenching. The doping of Dy3+ exceedingly improves the PL intensity of CsPbCl2Br1 nanocrystals glass (CPCB NCsG) with enhancing photoluminescence quantum yield from 8.0% to 30.2%, ascribed to the improved crystallinity and reduced defects. Meanwhile, the stability of CPCB NCsG exposed to air, light, and high temperature is largely boosted. After integrating with Dy3+‐CPCB NCsG, the responsivity, external quantum efficiency, detectivity, and stability of Si PDs are significantly enhanced. The responsivity (R) of Si PDs‐5% Dy3+‐CPCB NCsG is 0.006 A W−1 at 320 nm, which is sixfold higher than that of bare Si PDs. This work develops a blue Dy3+‐CPCB NCsG, which has great potential as a new luminescent material for the next generation of Si PDs.
Funder
National Natural Science Foundation of China
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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