Affiliation:
1. Laboratory of Solid‐State Optoelectronics Information Technology Key Laboratory of Semiconductor Materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China
2. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 P. R. China
3. Department of Physics Hebei Normal University of Science & Technology Qinhuangdao 066004 P. R. China
4. State Key Laboratory of Optoelectronic Materials and Technologies & School of Physics Sun Yat‐sen University Guangzhou 510275 P. R. China
Abstract
AbstractPlasmonic nano‐lasers possess enormous potential for miniaturization of on‐chip integrated light sources. However, achieving plasmonic lasing requires high‐quality plasmonic resonant cavities, which are currently limited by complex, small‐scale, and costly production methods. Here, a new type of external‐cavity free plasmonic nano‐lasers is first presented with ultra‐thin thickness, achieved through the facile spin‐coating of quasi‐2D perovskite films onto monocrystalline silver sheets. The external‐cavity free plasmonic nano‐lasers exhibit obvious lasing behaviors, evidenced by a well‐defined threshold, significant linewidth narrowing, and distinct polarization dependence. The internal lasing mechanism relies on the scattering loop of surface plasmon polaritons (SPPs) by the disordered grains of the polycrystalline perovskite film. Based on this loop, SPPs experience feedback and amplification at the interface between silver sheets and perovskite films, leading to the lasing. Compared to photonic mode lasers, plasmonic nano‐lasers exhibit a significantly reduced feature size (< 80 nm), a dramatically faster lasing dynamic process (17 ps), and enhanced feedback stability and efficiency. The external‐cavity free plasmonic nano‐lasers eliminate the strict requirements for plasmonic resonant cavities to overcome traditional optical diffraction limits, making them highly significant for future applications in on‐chip photoelectric or all‐optical integration.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Youth Innovation Promotion Association of the Chinese Academy of Sciences