Molecular Dissociation on the SiC(0001) 3×3 Surface-Reference-Cited by-同舟云学术

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Molecular Dissociation on the SiC(0001) 3×3 Surface

Published:2016-09-28 Issue:23 Volume:17 Page:3900-3906
ISSN:1439-4235
Container-title:ChemPhysChem
language:en
Short-container-title:ChemPhysChem

Author:

Sonnet Philippe¹,Stauffer Louise¹,Gille Marie²,Bléger David²,Hecht Stefan²,Cejas Cesare³⁴,Dujardin Gérald³,Mayne Andrew J.³

Affiliation:

1. IS2M, CNRS UMR 7361, UHA; 3b rue A. Werner 68057 Mulhouse Cedex France

2. Department of Chemistry and IRIS Adlershof; Humboldt-Universität zu Berlin; Brook-Taylor-Str. 2 12489 Berlin Germany

3. ISMO, CNRS UMR 8214; Université Paris Sud, Univ Paris-Saclay; Bât. 210 91405 Orsay France

4. Laboratoire Gulliver UMR 7083 and; Institut Pierre Gilles de Gennes (IPGG); Laboratoire MMN, ESPCI; 6, rue Jean Calvin 75005 Paris France

Publisher

Wiley

Subject

Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics

Reference73 articles.

1. Surface Chemistry of Silicon

2. The surface as molecular reagent: organic chemistry at the semiconductor interface

3. Room-temperature chemisorption of chloroethylenes on Si(111)7×7: formation of surface vinyl, vinylidene and their chlorinated derivatives

4. An STM study of the localized atomic reaction of 1,2- and 1,4-dibromobenzene at Si(111)-7×7

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Screening and manipulation by segregation of dopants in grain boundary of Silicon carbide: First-principles calculations;Ceramics International;2023-10

2. Density functional theory study for adsorption of oxygen and water molecules on 6H-SiC(0001) surface;Chinese Journal of Chemical Physics;2019-08

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