Affiliation:
1. School of Electronics & Display Engineering Hoseo University Asan Chungnam Republic of Korea 31499
Abstract
We developed oxide thin‐film transistor using the tantalum oxide grown by thermal oxidation for the low voltage operation. Thermal oxidation was performed after the deposition of tantalum by sputtering as a gate electrode. The thermal grown tantalum oxide was analyzed by XPS. a‐IGZO TFT using a thermally grown tantalum oxide gate insulator operated at less than 2 V and compared it with aluminum oxide deposited by ALD.