P‐155: Late‐News Poster: Low Voltage Operation a‐IGZO Thin Film Transistor Using by Thermal Oxidation Metal Oxide Insulator

Author:

Yu Eun Seong1,Kim Seung Gyun1,Kim Min Seong1,Lee Jong Mo1,Bae Byung Seong1

Affiliation:

1. School of Electronics & Display Engineering Hoseo University Asan Chungnam Republic of Korea 31499

Abstract

We developed oxide thin‐film transistor using the tantalum oxide grown by thermal oxidation for the low voltage operation. Thermal oxidation was performed after the deposition of tantalum by sputtering as a gate electrode. The thermal grown tantalum oxide was analyzed by XPS. a‐IGZO TFT using a thermally grown tantalum oxide gate insulator operated at less than 2 V and compared it with aluminum oxide deposited by ALD.

Publisher

Wiley

Subject

General Medicine

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