Nonlinear circuits with parallel‐/series‐connected HP‐type memory elements and their characteristic analysis-Reference-Cited by-同舟云学术

Nonlinear circuits with parallel‐/series‐connected HP‐type memory elements and their characteristic analysis

Published:2021-01-12 Issue:2 Volume:49 Page:513-532
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int J Circ Theor Appl

Author:

Liu Yue¹^ORCID,Guo Zhang²^ORCID,Chau Tat Kei³,Iu Herbert Ho‐Ching³,Si Gangquan²

Affiliation:

1. College of Electrical and Electronic Engineering Changchun University of Technology Changchun China

2. State Key Laboratory of Electrical Insulation and Power Equipment, Shaanxi Key Laboratory of Smart Grid, School of Electrical Engineering Xi'an Jiaotong University Xi'an China

3. The School of Electrical, Electronic and Computer Engineering The University of Western Australia Perth Western Australia Australia

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/cta.2915

Reference32 articles.

1. Memristive Model for Synaptic Circuits

2. Nonlinear circuit foundations for nanodevices, part I: the four-element torus

3. The fourth element

4. MEMRISTOR OSCILLATORS

5. The missing memristor found

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