A compact D-band I/Q mixer with improved transformer balun

Author:

Hou Debin1ORCID,Hong Wei1,Chen Jixin1,Yan Pinpin1,Xiong Yongzhong2

Affiliation:

1. State Key Laboratory of Millimeter Waves, School of Information Science and Engineering; Southeast University; Nanjing 210096 P. R. China

2. The Semiconductor Device Research Laboratory; Terahertz Research Center, CAEP; China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Effects of LO phase and amplitude imbalances and phase noise on M-QAM transceiver performance;Chen;IEEE Trans Ind Electron.,2010

2. Nanoscale CMOS transceiver design in the 90-170-GHz range;Laskin;IEEE Trans Microw Theory Techn.,2009

3. A SiGe quadrature transmitter and receiver chipset for emerging high-frequency applications at 160 GHz;Pfeiffer;IEEE Int Solid State Circuits Conf Tech Dig.,2010

4. A fundamental frequency 120-GHz SiGe BiCMOS distance sensor with integrated antenna;Sarkas;IEEE Trans Microw Theory Techn.,2012

5. A 1 V 17.9 dBm 60 GHz power amplifier in standard 65 nm CMOS;Lai;IEEE Int Solid-State Circuits Conf Tech Dig.,2010

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2. Research on Common-Mode Stability of Ka-Band Differential Common-Source Amplifiers;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27

3. A 220 GHz Orthogonal Modulator Based on Subharmonic Mixers Using Anti‐Paralleled Schottky Diodes;Chinese Journal of Electronics;2022-05

4. Transformer matched gilbert mixer with active balun for D band transmitter;Microwave and Optical Technology Letters;2019-12-24

5. Performance Investigation of Different Topologies of 1-100 GHz on-chip Transformers using 130 nm SiGe BiCMOS;Engineering, Technology & Applied Science Research;2019-12-01

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