Gate replacement with PMOS stacking for leakage reduction in VLSI circuits-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Gate replacement with PMOS stacking for leakage reduction in VLSI circuits

Published:2015-10-13 Issue:4 Volume:29 Page:565-576
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Panwar Uday¹,Khare Kavita¹

Affiliation:

1. Department of Electronics and Communication; Maulana Azad National Institute of Technology; Bhopal 462003 India

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Reference24 articles.

1. Cramming more components onto integrated circuits;Moore;Electron,1965

2. Progress in digital integrated electronics;Moore;Proceedings of the IEEE Int Elect Devices Meeting,1975

3. Nanotechnology goals and challenges for electronic applications;Bohr;IEEE Trans on Nanotechnol,2002

4. The international technology roadmap for semiconductors http://public.itrs.net/ 2003

5. Leakage power analysis and reduction for nano scale circuits;Agarwal;IEEE Micro,2006

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integrating flipped drain and power gating techniques for efficient FinFET logic circuits;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2018-04-19

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP