A General Synthetic Route to III–V Compound Semiconductor Nanowires-Reference-Cited by-同舟云学术

A General Synthetic Route to III–V Compound Semiconductor Nanowires

Published:2001-04 Issue:8 Volume:13 Page:591-594
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Shi W. S.¹,Zheng Y. F.¹,Wang N.¹²,Lee C.‐S.¹,Lee S.‐T.¹

Affiliation:

1. Center of Super‐Diamond and Advanced Film (COSDAF), and Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowoloon Tong, Hong Kong SAR (China)

2. Physics Department, The Hong Kong University of Science and Technology, Hong Kong SAR, (China)

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/1521-4095%28200104%2913%3A8%3C591%3A%3AAID-ADMA591%3E3.0.CO%3B2-%23

Reference26 articles.

1. Growth and optical properties of nanometer‐scale GaAs and InAs whiskers

2. Far‐infrared emission from hot quasi‐one‐dimensional quantum wires in GaAs

3. Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth

4. Large-Scale Catalytic Synthesis of Crystalline Gallium Nitride Nanowires

5. Size, position and direction control on GaAs and InAs nanowhisker growth

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