Affiliation:
1. State Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics, Chinese Academy of Sciences Beijing China
2. University of Chinese Academy of Sciences Beijing China
3. Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics, Chinese Academy of Sciences Beijing China
Abstract
AbstractUnderstanding magnetotransport properties in semiconductors plays a vital role in either developing future spintronic or unveiling the underpinning physics of electronic dynamics. In recent years, the high‐field magnetoconductance (HFM, B ~ 1 T) in polymers has drawn intense discussions and always been attributed to thermal spin polarization (TSP). In this work, the HFMs in several benchmark polymers are proposed to be correlated to the ∆g spin‐mixing effect, determined from their remarkable anisotropy in response to magnetic fields, which cannot be explained only by TSP. It is the fundamental difference between two spins' Lande factors stemming from the random orientations of molecular backbones that contributes to the intense ∆g spin‐mixing effect, leading to HFMs' anisotropy as high as 150%. It is further found that the ∆g spin‐mixing mechanism greatly correlates with the charge transport dynamics in polymers, in which a slow‐ to fast‐hopping crossover was observed and further verified by pressure‐dependent HFMs characteristics.
Funder
National Natural Science Foundation of China
Subject
Materials Chemistry,Polymers and Plastics,Surfaces, Coatings and Films,General Chemistry