Acceptor states in HgCdTe films grown by molecular-beam epitaxy on GaAs and Si substrates-Reference-Cited by-同舟云学术

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Acceptor states in HgCdTe films grown by molecular-beam epitaxy on GaAs and Si substrates

Published:2016-02-03 Issue:7-9 Volume:13 Page:469-472
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Yakushev M. V.,Mynbaev K. D.,Bazhenov N. L.,Varavin V. S.,Mikhailov N. N.,Marin D. V.,Dvoretsky S. A.,Sidorov Yu. G.

Funder

Ministry of Education of the Russian Federation

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence in Mercury Cadmium Telluride – a Historical Retrospective. Part II: 2004–2022;Reviews on Advanced Materials and Technologies;2022

2. Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies;Journal of Electronic Materials;2018-05-15

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