Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane-Reference-Cited by-同舟云学术

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Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane

Published:2012-02-15 Issue:3-4 Volume:9 Page:960-963
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Edwards M. J.,Le Boulbar E. D.,Vittoz S.,Vanko G.,Brinkfeldt K.,Rufer L.,Johander P.,Lalinský T.,Bowen C. R.,Allsopp D. W. E.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local strain modification effects on global properties of AlGaN/GaN high electron mobility transistors;Microelectronic Engineering;2022-06

2. Model and Simulation of GaN-Based Pressure Sensors for High Temperature Applications—Part II: Sensor Design and Simulation;IEEE Sensors Journal;2021-09-15

3. Model and Simulation of GaN-Based Pressure Sensors for High Temperature Applications—Part I: Physics Based Compact Modeling;IEEE Sensors Journal;2021-09-15

4. Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices;Sensors;2020-07-11

5. Dual-surface lens with ring-shaped structures for optical tuning of GaN ultraviolet photodetectors at low temperature;Sensors and Actuators A: Physical;2020-03

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