Impurity-band conduction in polycrystalline films of GaSb and GaSbAs grown by molecular-beam deposition-Reference-Cited by-同舟云学术

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Impurity-band conduction in polycrystalline films of GaSb and GaSbAs grown by molecular-beam deposition

Published:2011-11-02 Issue:2 Volume:9 Page:274-277
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Kajikawa Y.,Okamura K.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Predicting the bandgap energy of distorted GaSbxAs1-x and InSbxAs1-x using design of experiment (DoE) and artificial intelligence (AI): A comparative study;Journal of Physics and Chemistry of Solids;2023-04

2. Experimental evidence of impurity-band transport in p-type polycrystalline germanium film;Physica B: Condensed Matter;2020-05

3. Effects of impurity-band conduction on thermoelectric properties of lightly doped p-type CoSb3;Journal of Applied Physics;2014-10-21

4. Two-band conduction in electron-irradiated n-InSe single crystals;physica status solidi (b);2014-09-26

5. Thickness dependence of electrical properties of polycrystalline GaSbAs thin films grown on glass substrates: Analysis on the basis of a two-band conduction model using a differential Hall-effect method;Thin Solid Films;2013-10

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