Characterization of light‐activated Cu defects in silicon: Comparison with the recombination activity of metallic precipitates
Author:
Affiliation:
1. Department of Electronics and NanoengineeringAalto University02150 EspooFinland
2. Fraunhofer Institute for Solar Energy Systems ISEHeidenhofstraße 279110 Freiburg im BreisgauGermany
Funder
Alfred Kordelinin Säätiö
Publisher
Wiley
Subject
Condensed Matter Physics
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201700103
Reference22 articles.
1. Influence of copper contamination on the illuminated forward and dark reverse current-voltage characteristics of multicrystalline p-type silicon solar cells
2. Role of copper in light induced minority-carrier lifetime degradation of silicon
3. Accelerated light-induced degradation for detecting copper contamination in p-type silicon
4. Light-induced Degradation in Multicrystalline Silicon: The Role of Copper
5. Influence of light on interstitial copper in p -type silicon
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development;Progress in Photovoltaics: Research and Applications;2018-08-08
2. Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation;AIP Advances;2018-01
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