Ion beam synthesis of embedded III-As nanocrystals in silicon substrate-Reference-Cited by-同舟云学术

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Ion beam synthesis of embedded III-As nanocrystals in silicon substrate

Published:2014-10-29 Issue:1-2 Volume:12 Page:55-59
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Khelifi Rim,Frégnaux Mathieu,Le Gall Yann,Muller Dominique,Schmerber Guy,Mathiot Daniel

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N2 into SiO2/Si and SiNx/Si wafers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-12

2. Influence of the Irradiation with High-Energy Xe Ions on the Structure and Photoluminescence of Silicon and Silica with InAs Nanoclusters;Journal of Engineering Physics and Thermophysics;2019-03

3. Semiconductor Applications;Flash Lamp Annealing;2019

4. Local Formation of InAs Nanocrystals in Si by Masked Ion Implantation and Flash Lamp Annealing;physica status solidi c;2017-10-13

5. Formation of InxGa1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing;New Journal of Physics;2017-06-20

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