Refined Analysis of Low‐Temperature Data of Hall‐Effect Measurements on Sb‐Dopedn‐Ge on the Basis of an Impurity‐Hubbard‐Band Model
Author:
Affiliation:
1. Department of Electric and Control Systems Engineering, Interdisciplinary Faculty of Science and Engineering, Shimane UniversityMatsue 690‐8504Japan
Publisher
Wiley
Subject
Condensed Matter Physics
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201700151
Reference53 articles.
1. Electrical Properties of Germanium Semiconductors at Low Temperatures
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3. Electronic Properties of Doped Semiconductors
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5. Transition temperature from band to hopping direct current conduction in crystalline semiconductors with hydrogen-like impurities: Heat versus Coulomb attraction
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