4H- and 6H-SiC UV photodetectors
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural and optical characteristics of nickel bis(acetylacetonate) thin films as a buffer layer for optoelectronic applications;Materials Science in Semiconductor Processing;2019-09
2. High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area;Chinese Optics Letters;2019
3. Large-Area 4H-SiC Ultraviolet Avalanche Photodiodes Based on Variable-Temperature Reflow Technique;IEEE Electron Device Letters;2018-11
4. Effect of the buffer layer on the metal-semiconductor-metal UV photodetector based on Al-doped and undoped ZnO thin films with different device structures;physica status solidi (a);2015-02-04
5. Ultraviolet Photodetection Properties of ZnO/Si Heterojunction Diodes Fabricated by ALD Technique Without Using a Buffer Layer;JSTS:Journal of Semiconductor Technology and Science;2014-02-28
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