Current on-off operation of graphene transistor with dual gates and He ion irradiated channel-Reference-Cited by-同舟云学术

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Current on-off operation of graphene transistor with dual gates and He ion irradiated channel

Published:2013-09-23 Issue:11 Volume:10 Page:1608-1611
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Nakaharai Shu,Iijima Tomohiko,Ogawa Shinichi,Li Song-Lin,Tsukagoshi Kazuhito,Sato Shintaro,Yokoyama Naoki

Funder

Japan Society for the Promotion of Science (JSPS) through the Funding Program for World-Leading Innovative R&D on Science and Technology

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201300262/fullpdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-dimensional materials under ion irradiation: from defect production to structure and property engineering;Defects in Two-Dimensional Materials;2022

2. Are two-dimensional materials radiation tolerant?;Nanoscale Horizons;2020

3. Stress-Dependent Performance Optimization of Reconfigurable Silicon Nanowire Transistors;IEEE Electron Device Letters;2015-10

4. Metal Oxide Semiconductor Field Effect Transistors;Monolithic Nanoscale Photonics–Electronics Integration in Silicon and Other Group IV Elements;2015

5. Preparation, Applications of Two-Dimensional Graphene-like Molybdenum Disulfide;Integrated Ferroelectrics;2014-11-22

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