Intergranular barrier height fluctuations in polycrystalline semiconductors-Reference-Cited by-同舟云学术

Intergranular barrier height fluctuations in polycrystalline semiconductors

Published:2017-03-15 Issue:5 Volume:14 Page:1700069
ISSN:1862-6351
Container-title:physica status solidi c
language:en
Short-container-title:Phys. Status Solidi C

Author:

Buono C.¹,Schipani F.¹,Ponce M. A.¹,Aldao C. M.¹

Affiliation:

1. Institute of Materials Science and Technology (INTEMA)University of Mar del Plata and National Research Council (CONICET)Juan B. Justo 4302B7608FDQ Mar del PlataArgentina

Funder

National Scientific and Technical Research Council

National University of Mar del Plata

Publisher

Wiley

Subject

Condensed Matter Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201700069

Reference43 articles.

1. Theory of conduction in ZnO varistors

2. Semiconductor grain-boundary admittance: Theory

3. Carrier transport through grain boundaries in semiconductors

4. Understanding the fundamental principles of metal oxide based gas sensors; the example of CO sensing with SnO2sensors in the presence of humidity

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