MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates-Reference-Cited by-同舟云学术

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MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

Published:2014-03-24 Issue:7-8 Volume:11 Page:1182-1185
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Nakasu Taizo,Sun Wei-Che,Yamashita Sotaro,Aiba Takayuki,Taguri Kosuke,Kobayashi Masakazu,Asahi Toshiaki,Togo Hiroyoshi

Funder

Waseda University Research Initiatives

Strategic Research Foundation Grant-aided Project for Private Universities from MEXT

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201300582/fullpdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect density reduction in core layer of ZnTe electro-optical waveguide by low lattice mismatched interfaces;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-07

2. Selective growth of ZnTe on sapphire substrates using a SiO2 mask;physica status solidi (b);2016-09-21

3. Propagation loss reduction of ZnMgTe/ZnTe waveguide devices;Japanese Journal of Applied Physics;2016-06-29

4. Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates;Journal of Electronic Materials;2016-06-08

5. ZnTe layers onR- andS-plane sapphire substrates;physica status solidi (c);2016-02-09

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