On-chip addressable Schottky-on-heterojunction light-emitting diode arrays on AlGaN/GaN-on-Si platform-Reference-Cited by-同舟云学术

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On-chip addressable Schottky-on-heterojunction light-emitting diode arrays on AlGaN/GaN-on-Si platform

Published:2016-02-17 Issue:5-6 Volume:13 Page:365-368
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Tang Xi,Li Baikui,Lu Yunyou,Chen Kevin J.

Funder

Hong Kong Research Grant Council

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarization-Charge Inversion at Al2O3/GaN Interfaces through Post-Deposition Annealing;Electronics;2020-06-30

2. Improved conduction in GaN Schottky junctions with HfO2 passivation layers through post-deposition annealing;Japanese Journal of Applied Physics;2020-02-14

3. Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment;Current Applied Physics;2020-02

4. Analysis on Trap States in p-Metal-Oxide-Semiconductor Capacitors with Ultraviolet/Ozone-Treated GaN Interfaces Through Frequency-Dispersion Capacitance–Voltage Measurements;Electronic Materials Letters;2020-01-02

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