Epitaxial growth of high-quality Mgx Zn1-xO films by a plasma-assisted reactive evaporation method using ZnMg alloys as a source material-Reference-Cited by-同舟云学术

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Epitaxial growth of high-quality Mgx Zn1-xO films by a plasma-assisted reactive evaporation method using ZnMg alloys as a source material

Published:2012-05-08 Issue:8-9 Volume:9 Page:1813-1816
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Abe T.,Nakagawa A.,Tanaka M.,Nakagawa M.,Endo H.,Meguro K.,Kashiwaba Y.,Chiba S.,Ojima T.,Aota K.,Takahashi S.,Daibo M.,Osada H.,Fujiwara T.,Yamaguchi K.,Niikura I.,Kashiwaba Y.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical characterization by variable angle spectroscopic ellipsometry of nitrogen-doped Mg Zn1−O thin films prepared by the plasma-assisted reactive evaporation method;Thin Solid Films;2014-11

2. Estimation of band gap energy of MgxZn1-xO films by photocurrent;physica status solidi (c);2014-03-24

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