Electrochemical profiling of heterostructures with multiple quantum wells InGaN/GaN-Reference-Cited by-同舟云学术

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Electrochemical profiling of heterostructures with multiple quantum wells InGaN/GaN

Published:2013-01-24 Issue:3 Volume:10 Page:342-345
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Zubkov Vasily,Kucherova Olga,Frolov Dmitry,Zubkova Anna

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Emission processes of the interaction between the quantum well and donor deltalayer in heterostructures for pHEMTs;TURKISH JOURNAL OF PHYSICS;2019-06-12

2. ECV Doping Profile Measurements in Silicon Using Conventional Potentiostat;Journal of Electronic Materials;2018-09-21

3. Electrochemical capacitance-voltage profiling of nonuniformly doped GaAs heterostructures with SQWs and MQWs for LED applications;TURKISH JOURNAL OF PHYSICS;2018-08-15

4. Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions;Semiconductors;2018-07-06

5. Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence;Technical Physics;2017-10

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