Gold‐induced crystallization of amorphous germanium deposited on glass: Bilayer and multilayer films-Reference-Cited by-同舟云学术

Gold‐induced crystallization of amorphous germanium deposited on glass: Bilayer and multilayer films

Published:2017-03-22 Issue:5 Volume:14 Page:1700083
ISSN:1862-6351
Container-title:physica status solidi c
language:en
Short-container-title:Phys. Status Solidi C

Author:

Bouhadda Ismail¹,Laidoudi Lamia²,Simon Claude³,Bebiche Sarah⁴

Affiliation:

1. TIMA LaboratoryUniversity Grenoble AlpesF‐38031 GrenobleFrance

2. Institut d'Électronique et des Télécommunications de Rennes‐Département Microélectronique & MicrocapteursBât.11BUniversité Rennes 1Campus de Beaulieu35042 RennesFrance

3. Laboratoire de Physique des MatériauxEquipe: Couches Minces et SemiconducteursFaculté de PhysiqueDépartement Matériaux et ComposantsUSTHBBP 32 El Alia16111 Bab‐EzzouarAlgerAlgérie

4. Department of Electronic and Computer EngineeringCenter for Display ResearchHong Kong University of Science and Technology11Clear Water BayKowloonHong kong

Publisher

Wiley

Subject

Condensed Matter Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201700083

Reference22 articles.

1. High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure

2. Low-temperature formation (<500°C) of poly-Ge thin-film transistor with NiGe Schottky source/drain

3. High-Electron-Mobility $\hbox{Ge/GeO}_{2}$ n-MOSFETs With Two-Step Oxidation

4. Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization

5. In situ low temperature growth of poly-crystalline germanium thin film on glass by RF magnetron sputtering

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1. A very low temperature (170 °C) crystallization of amorphous-Ge thin film on glass via Au induced layer exchange process in amorphous-Ge/GeOx/Au/glass stack and electrical characterization;Applied Surface Science;2021-03