Thermal activation and temperature dependent PL and CL of Tb doped amorphous AlN and SiN thin films-Reference-Cited by-同舟云学术

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Thermal activation and temperature dependent PL and CL of Tb doped amorphous AlN and SiN thin films

Published:2015-07-22 Issue:8 Volume:12 Page:1183-1186
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Guerra J. Andres,Montañez Liz,Winnacker Albrecht,De Zela Francisco,Weingärtner Roland

Funder

Management Research Office (DGI) of the Pontificia Universidad Católica del Perú

PUCP under the PhD scholarship program Huiracocha

German Academic Exchange Service

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201400226/fullpdf

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Indirect excitation and luminescence activation of Tb doped indium tin oxide and its impact on the host’s optical and electrical properties;Journal of Physics D: Applied Physics;2022-02-24

2. Experimental Realization of 1400–2100 nm Broadband Emission for Wide-Bandwidth Optical Communication in Er–Tm Codoped ZnO Films and Devices;The Journal of Physical Chemistry C;2020-01-20

3. Influence of rapid thermal annealing temperature on the photoluminescence of Tb ions embedded in silicon nitride films;Thin Solid Films;2019-04

4. Defect-related photoluminescence emission from annealed ZnO films deposited on AlN substrates;Materials Research Bulletin;2017-11

5. Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells;MRS Advances;2017-07-05

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