Development of a high transconductance GaN MMIC technology for millimeter wave applications-Reference-Cited by-同舟云学术

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Development of a high transconductance GaN MMIC technology for millimeter wave applications

Published:2010-12-20 Issue:2 Volume:8 Page:297-299
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Haupt C.,Maroldt S.,Quay R.,Pletschen W.,Leuther A.,Ambacher O.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors;Micromachines;2024-09-13

2. High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application;Semiconductor Science and Technology;2023-02-01

3. Is E-Band Satellite Communication Viable?: Advances in Modern Solid-State Technology Open Up the Next Frequency Band for SatCom;IEEE Microwave Magazine;2017-11

4. (Invited) Important Recent Advancement of GaN Technology and MMICs for W-Band Applications;ECS Transactions;2017-10-25

5. A Ka band 15W power amplifier MMIC based on GaN HEMT technology;2016 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM);2016-05

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