Analysis of low‐temperature data of Hall‐effect measurements on Ga‐dopedp‐Ge on the basis of an impurity‐Hubbard‐band model
Author:
Affiliation:
1. Interdisciplinary Faculty of Science and EngineeringDepartment of Electric and Control Systems EngineeringShimane UniversityMatsue 690‐8504Japan
Publisher
Wiley
Subject
Condensed Matter Physics
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201700071
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1. Electrical Properties of Germanium Semiconductors at Low Temperatures
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