Realization of two-dimensional electron gas in AlGaN/GaN HEMT structure grown on Si(111) by PA-MBE-Reference-Cited by-同舟云学术

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Realization of two-dimensional electron gas in AlGaN/GaN HEMT structure grown on Si(111) by PA-MBE

Published:2011-06-07 Issue:7-8 Volume:8 Page:2075-2077
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Dharmarasu N.,Radhakrishnan K.,Sun Z. Z.,Agrawal M.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications;Journal of Physics D: Applied Physics;2021-01-22

2. Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy;Japanese Journal of Applied Physics;2015-05-19

3. Mechanism of Si outdiffusion in plasma-assisted molecular beam epitaxy of GaN on Si;physica status solidi (c);2012-12-05

4. Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy;Thin Solid Films;2012-10

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