Synthesis and Structure of Tin and Germanium Complexes as Precursors Containing Alkoxyaminoalkoxide Ligands for Thin Film Transistors-Reference-Cited by-同舟云学术

Synthesis and Structure of Tin and Germanium Complexes as Precursors Containing Alkoxyaminoalkoxide Ligands for Thin Film Transistors

Published:2020-05-26 Issue:21 Volume:2020 Page:2074-2079
ISSN:1434-1948
Container-title:European Journal of Inorganic Chemistry
language:en
Short-container-title:Eur. J. Inorg. Chem.

Author:

Lee Ga Yeon¹²,Lee Ji Hun¹,Han Seong Ho¹²,Park Bo Keun¹,Son Seung Uk²,Kim Chang Gyoun¹,Jeon Dong Ju¹,Chung Taek‐Mo¹^ORCID

Affiliation:

1. Thin Film Materials Research Center Korea Research Institute of Chemical Technology (KRICT) 141 Gajeong‐ro, Yuseong‐gu 34114 Deajeon Republic of Korea

2. Department of Chemistry Sungkyunkwan University (SKKU) 2066, Seobu‐ro, Jangan‐gu 16419 Suwon‐si Gyeonggi‐do Republic of Korea

Funder

Korea Research Institute of Chemical Technology

National Research Foundation of Korea

Publisher

Wiley

Subject

Inorganic Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/ejic.202000167

Reference29 articles.

1. Metal oxides for optoelectronic applications

2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

3. Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

4. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

5. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis and characterization of Sn complexes containing aminoalkoxide ligands for solution process;Molecular Crystals and Liquid Crystals;2023-01-11