Improving the Recombination Losses by the Inclusion of Bi‐HTM (CuO/Silicon) Layers for Formamidinium Tin‐Based Perovskite Solar Cells

Abstract

AbstractThe innovative lead‐free formamidinium tin‐based perovskite solar cell structure is considered nontoxic and potentially more stable than lead‐based, although its performance is not yet excellent. This research aims to enhance the power conversion efficiency of perovskite solar cells and reduce the recombination losses. According to device modeling, the FASnI3 perovskite solar cell demonstrates a packing conversion efficiency of 14.3% (open circuit voltage (Voc) = 0.899 V, fill factor (FF) = 58.9%, and current density (Jsc) = 26.06 mA cm−2) by employing Bi hole transporting layers, a copper oxide, and crystalline silicon layers. Some features that affect the device include the thickness of each layer, the doping density of copper oxide and a silicon layer, and the back contact metalwork function. It is proposed that Bi‐HTL reduce the carriers to enter hole transport layer (HTL) as the doping change so that decreasing charge carriers recombination and enhancing the device efficiency in tin‐based perovskite solar cell with the structure of ITO/TiO2/FASnI3/CuO/Si/C. Furthermore, the impacts of various charge transport layers on energy band alignment, recombination, electric field, and IV properties are thoroughly explored.