Investigation of All Inorganic Lead‐Free Perovskite CsSnI3/Silicon Heterojunction Solar Cell Using SCAPS‐1D

Abstract

AbstractAb inito investigation of Perovskite/Silicon heterojunction solar cell is performed using SCAPS‐1D. Here, all‐inorganic lead‐free perovskite, CsSnI3, is investigated for solar cell with CsSnI3/n‐c‐Si configuration and a maximum efficiency of 26.52% is optimized. First, thickness optimization of CsSnI3/n‐c‐Si solar cell with Flat‐Band ohmic contact on both sides is performed for CsSnI3 and n‐c‐Si layers and is optimized to 10 nm for CsSnI3 and 175 µm for n‐c‐Si with 19.45% efficiency. Subsequently, doping concentration optimization of CsSnI3 and n‐c‐Si layers has furnished optimum 26.52% efficiency with 4.5 × 1017 cm−3 of CsSnI3 and 1.7 × 1018 cm−3 of n‐c‐Si. Effect of various metal contacts are investigated to find the feasible metal contact among Pt, Au, Al, Ag, and Cu. Pt and Au are found feasible for Front metal contact, whereas Al, Ag, and Cu are found feasible for Back metal contact. Moreover, the impact of CsSnI3/n‐c‐Si interface defects on performance parameters is investigated.