Unraveling the Performance of All‐Inorganic Lead‐Free CsSnI3‐Based Perovskite Photovoltaic with Graphene Oxide Hole Transport Layer

Abstract

AbstractAddressing the imperative need to eliminate hazardous lead from the widely used metal halide perovskite photovoltaics (PPVs), the search for efficient and stable lead‐free perovskite alternatives remains pivotal. Herein, a performance analysis of lead‐free, all‐inorganic cesium tin triiodide (CsSnI3)‐based PPVs with a graphene oxide hole transporting layer using solar cell capacitance simulator is presented. Various parameters to optimize the PPV performance, including CsSnI3 layer thickness, defect density, interface defect, parasitic resistances, and working temperature are explored. The optimization process yielded remarkable results, with  open‐circuit voltage of 0.87 V, short‐circuit current density of 32.55 mA cm−2, fill factor of 77.59%, and power conversion efficiency of 22.15%. The proposed device structure and parameters not only contribute to the advancement of these experimental works but also offer a novel strategy for the structural optimization of lead‐free PPVs, thereby paving new avenues for future research in this area.