Affiliation:
1. School of Information Science and Engineering Shenyang University of Technology Shenyang 110870 China
Abstract
AbstractIn this work, a single gate controlled nonvolatile floating program gate (FPG) reconfigurable field effect transistor (RFET) is proposed. Different from the traditional RFET, it introduces a nonvolatile charge storage layer as an FPG instead of a program gate that needs independent power supply. The stored charge in the FPG can be programmed by the control gate (CG). Therefore, the proposed FPG‐RFET essentially requires only one independently powered gate to complete the reconfigurable operation. Moreover, the CG can regulate the equivalent voltage in the FPG, which can effectively reduce the static power consumption and the generation of reverse leakage current. The physical mechanism has also been analyzed in detail.
Funder
National Natural Science Foundation of China
Subject
Multidisciplinary,Modeling and Simulation,Numerical Analysis,Statistics and Probability
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献