Affiliation:
1. Department of Electrical and Computer Engineering Sungkyunkwan University Suwon Gyeonggi‐Do 16419 Republic of Korea
2. Interdisciplinary Program in Photovoltaic System Engineering Sungkyunkwan University Suwon Gyeonggi‐Do 16419 Republic of Korea
3. College of Information and Communication Engineering Sungkyunkwan University Suwon Gyeonggi‐Do 16419 Republic of Korea
Abstract
AbstractThis study entails the examination of tunnel oxide passivated contact on p‐type silicon wafers (p‐TOPCon) passivated with n‐polysilicon for a solar cell by using Quokka‐3, a numerical simulation program. The effects of the thickness, bulk lifetime, resistivity, and selectivity of charge carriers due to the polysilicon passivated contact are investigated. Through such n‐polysilicon passivated contact, the back‐emitter solar cells engender higher internal power owing to enhanced surface passivation. This further reduces the shading loss due to front metallization; however, the reduced minority carrier lifetime of the p‐type Czochralski (Cz) wafer restricts the possibilities for high efficiency. Subsequently, the minority charge carrier lifetime of the p‐type wafer conceivably becomes an obstacle to realizing TOPCon solar cells with a high conversion efficiency. This study demonstrates that a configuration suitable for the industrial manufacturing of high‐efficiency solar cells is a crystalline silicon solar cell on a p‐type wafer through a rear‐emitter n‐polysilicon passivated contact. A roadmap toward 24.87% of the p‐TOPCon solar cells through the n‐type polysilicon passivated contact is also devised.
Funder
Korea Institute of Energy Technology Evaluation and Planning
Subject
Multidisciplinary,Modeling and Simulation,Numerical Analysis,Statistics and Probability
Cited by
1 articles.
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