A 60-GHz three-stage low noise amplifier using 0.15-μm gallium-arsenic pseudomorphic high-electron mobility transistor technology-Reference-Cited by-同舟云学术

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A 60-GHz three-stage low noise amplifier using 0.15-μm gallium-arsenic pseudomorphic high-electron mobility transistor technology

Published:2011-12-15 Issue:2 Volume:54 Page:329-332
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Hu Chih-Min,Hung Chung-Yu,Chu Chun-Hsueh,Chang Da-Chiang,Juang Ying-Zong,Gong Jeng,Huang Chih-Fang,Chin Chih-Min

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. A 5.7-GHz low noise amplifier with source-degenerated active inductor;Chu;Microwave Opt Technol Lett,2009

2. Millimeter-wave CMOS design;Doan;IEEE J Solid-State Circuits,2005

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Simulation of a Compact, High Gain and High P1dB MMIC Based Low Noise Amplifier at V-Band;2023 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2023-12-11

2. Design of a V-band low noise amplifier for passive millimeter wave imaging application;Microelectronics Journal;2022-08

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