Electrical Properties of p-Type ZnSnAs2 Crystals at Low Temperatures
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Impurity Conduction in Transmutation-Dopedp-Type Germanium
2. Electrical Properties ofp-Type Indium Antimonide at Low Temperatures
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1. Annealing Effects on Impurity Band Conduction of ZnSnAs2Epitaxial Films;IOP Conference Series: Materials Science and Engineering;2011-03-01
2. Impurity band conduction and negative magnetoresistance in p-ZnSnAs2thin films;physica status solidi (c);2009-05
3. Electrotransport Properties of p-ZnSnAs2Thin Films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates;Japanese Journal of Applied Physics;2008-01-22
4. Electrical and optical properties and fermi level pinning in electron irradiated ZnSnAs2;physica status solidi (a);1990-04-16
5. Synthesis and vapor transport growth of ternary group III chalcogenides;Journal of Crystal Growth;1984-11
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