On the Field Dependence of the Carrier Concentration in a High Electric Field-Reference-Cited by-同舟云学术

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On the Field Dependence of the Carrier Concentration in a High Electric Field

Published:1969 Issue:2 Volume:33 Page:K137-K139
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Kachlishvili Z. S.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Electrical Domains in the Hot Electron Semiconductors. Preprint of the Institute of Radioengineering and Electronics, Moscow 1965.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Harmonic generation of microwaves in semiconductors in the presence of deep repulsive traps;Journal of Applied Physics;1991-02-15

2. Hot-Carrier Galvanomagnetic Effects in High Magnetic Fields;physica status solidi (b);1982-08-01

3. Nonradiative multiphonon carrier capture by deep neutral traps;Physica Status Solidi (b);1979-09-01

4. Galvanomagnetic and recombination effects in semiconductors in a strong electric field;Physica Status Solidi (a);1976-01-16

5. On the Theory of the Low-Temperature Galvanomagnetic Effects in Semiconductors in Strong Electric Fields;physica status solidi (b);1970

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