Infra-Red and Visible Photoluminescence in In1−xGaxP-Reference-Cited by-同舟云学术

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Infra-Red and Visible Photoluminescence in In1−xGaxP

Published:1968 Issue:2 Volume:30 Page:K125-K126
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:de
Short-container-title:Phys. Stat. Sol. (b)

Author:

White A. M.,Williams E. W.,Porteous P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. and , Proc. 8th Internat. Conf. Semicond. Phys. Moscow 1968, to be published.

2. Temperature Dependence of Photoluminescence in Cadmium‐Doped Epitaxial GaAs

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mass spectrometric and thermodynamic studies of vapor-phase growth of In(1−x)GaxP;Journal of Physics and Chemistry of Solids;1973-06

2. Liquid phase epitaxial growth of GaxIn1−xP;Journal of Electronic Materials;1972-11

3. Orange Laser Emission and Bright Electroluminescence from In1−xGaxP Vapor‐Grownp‐nJunctions;Applied Physics Letters;1972-06

4. Light-emitting diodes;Proceedings of the IEEE;1972

5. Preparation of Single Crystals of III–V Compounds;Preparative Methods in Solid State Chemistry;1972

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