Affiliation:
1. Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 610054 China
2. Materials Research Laboratory University of Nova Gorica Vipavska 13 Nova Gorica SI‐5000 Slovenia
3. Faculty of Chemistry and Chemical Engineering University of Maribor Smetanova 17 Maribor SI‐2000 Slovenia
Abstract
AbstractIn the emerging Sb2S3‐based solar energy conversion devices, a CdS buffer layer prepared by chemical bath deposition is commonly used to improve the separation of photogenerated electron‐hole pairs. However, the cation diffusion at the Sb2S3/CdS interface induces detrimental defects but is often overlooked. Designing a stable interface in the Sb2S3/CdS heterojunction is essential to achieve high solar energy conversion efficiency. As a proof of concept, this study reports that the modification of the Sb2S3/CdS heterojunction with an ultrathin Al2O3 interlayer effectively suppresses the interfacial defects by preventing the diffusion of Cd2+ cations into the Sb2S3 layer. As a result, a water‐splitting photocathode based on Ag:Sb2S3/Al2O3/CdS heterojunction achieves a significantly improved half‐cell solar‐to‐hydrogen efficiency of 2.78% in a neutral electrolyte, as compared to 1.66% for the control Ag:Sb2S3/CdS device. This work demonstrates the importance of designing atomic interfaces and may provide a guideline for the fabrication of high‐performance stibnite‐type semiconductor‐based solar energy conversion devices.
Funder
National Natural Science Foundation of China
Javna Agencija za Raziskovalno Dejavnost RS
Cited by
6 articles.
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