Affiliation:
1. Fujian Provincial Key Laboratory of Advanced Materials Oriented Chemical Engineering College of Chemistry and Materials Science Fujian Normal University Fuzhou Fujian 350117 China
2. Fujian Key Laboratory of Pollution Control and Resource Reuse College of Environmental and Resource Sciences College of Carbon Neutral Modern Industry Fujian Normal University Fuzhou Fujian 350117 China
Abstract
AbstractLoading cocatalysts onto semiconductors is one of the most popular strategies to inhibit charge recombination, but the efficiency is generally hindered by the localized built‐in electric field and the weakly connected interface. Here, this work designs and synthesizes a 1D P‐doped CdS nanowire/Ni2P heterojunction with gradient doped P to address the challenges. In the composite, the gradient P doping not only creates a funneled bandgap structure with a built‐in electric field oriented from the bulk of P‐CdS to the surface, but also facilitates the formation of a tightly connected interface using the co‐shared P element. Consequently, the photogenerated charge carriers are enabled to be pumped from inside to surface of the P‐CdS and then smoothly across the interface to the Ni2P. The as‐obtained P‐CdS/Ni2P displays high visible‐light‐driven H2 evolution rate of ≈8265 µmol g−1 h−1, which is 336 times and 120 times as that of CdS and P‐CdS, respectively. This work is anticipated to inspire more research attention for designing new gradient‐doped semiconductor/cocatalyst heterojunction photocatalysts with bridged interface for efficient solar energy conversion.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Fujian Province
Fuzhou University
Cited by
2 articles.
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