Affiliation:
1. School of Physics Science & Information Technology Liaocheng University Liaocheng 252059 P. R. China
2. CNRS Institut de Minéralogie de Physique des Matériaux et de Cosmochimie (IMPMC) UMR CNRS 7590 Muséum National d'Histoire Naturelle IRD UMR 206 Sorbonne Université 4 place Jussieu Paris 75005 France
3. Key Laboratory of Material Physics Ministry of Education School of Physics Zhengzhou University Zhengzhou 450052 P. R. China
4. Laboratory of Quantum Functional Materials Design and Application School of Physics and Electronic Engineering Jiangsu Normal University Xuzhou 221116 P. R. China
Abstract
AbstractPressure‐modulated self‐trapped exciton (STE) emission mechanism in all‐inorganic lead‐free metal halide double perovskites characterized by large Stokes‐shifted broadband emission, has attracted much attention across various fields such as optics, optoelectronics, and biomedical sciences. Here, by employing the all‐inorganic lead‐free metal halide double perovskite Cs2TeCl6 as a paradigm, the authors elucidate that the performance of STE emission can be modulated by pressure, attributable to the pressure‐induced evolution of the electronic state (ES). Two ES transitions happen at pressures of 1.6 and 5.8 GPa, sequentially. The electronic behaviors of Cs2TeCl6 can be jointly modulated by both pressure and ES transitions. When the pressure reaches 1.6 GPa, the Huang–Rhys factor S, indicative of the strength of electron‐phonon coupling, attains an optimum value of ≈12.0, correlating with the pressure‐induced photoluminescence (PL) intensity of Cs2TeCl6 is 4.8‐fold that of its PL intensity under ambient pressure. Through analyzing the pressure‐dependent STE dynamic behavioral changes, the authors have revealed the microphysical mechanism underlying the pressure‐modulated enhancement and quenching of STE emission in Cs2TeCl6.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Natural Science Foundation of Shandong Province