Programmable Organic‐Free Negative Differential Resistance Memristor Based on Plasmonic Tunnel Junction-Reference-Cited by-同舟云学术

Programmable Organic‐Free Negative Differential Resistance Memristor Based on Plasmonic Tunnel Junction

Published:2020-07-26 Issue:34 Volume:16 Page:2002727
ISSN:1613-6810
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language:en
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Author:

Xu Chen¹²,Li Chuanping¹³,Jin Yongdong¹²³^ORCID

Affiliation:

1. State Key Laboratory of Electroanalytical Chemistry Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Jilin 130022 China

2. School of Chemistry and Materials Science University of Science and Technology of China (USTC) Hefei Anhui 230026 China

3. School of Chemical Sciences University of Chinese Academy of Sciences Beijing 100049 China

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202002727

Reference31 articles.

1. Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device

2. Nonvolatile Memory Elements Based on Organic Materials

3. The missing memristor found

4. A scalable neuristor built with Mott memristors

5. New Phenomenon in Narrow Germaniump−nJunctions

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